Fabrication of nc-Si/c-Si solar cells using hot-wire chemical vapor deposition and laser annealing

Abstract

crystallization technique. It was found that both the short-circuit current density and fill factor of the Si heterojunction solar cells were mainly dependent on the energy density of the laser beam. An efficiency of 14.2% is achieved for the n-nc-Si/p-c-Si heterojunction solar cell under a laser irradiation density of 382 mW/cm².

Figures

Fig. 1. TEM images of electron diffraction patterns of n-type Si films prepared by HWCVD: (a) using pure SiH4, (b) with hydrogen dilution ratio R_H=0.1 and (c) with R_H=0.9.

Fig. 2. Raman spectra of n-type nc-Si films after laser annealing with various power densities. The samples were grown using HWCVD with R_H=0.9.

Fig. 3. TEM images of n-type nc-Si films before (a) and after laser annealing with power densities of (b) 382 mW/cm² and (c) 509 mW/cm², and (d) magnification of (c).

Fig. 4. Current–voltage characteristic of the Si HJ solar cell measured under AM 1.5 solar simulator.

Fabrication of nc-Si_c-Si solar cells using hot-wire chemic.pdf